Tutorial Speakers

Presentation Title TBA

Prof. Masaru Hori

Center for Low-temperature Plasma Sciences (cLPS), Nagoya University

Atomic-level control of plasma processing toward sub-nm node technologies
Dr. Satoshi Hamaguchi

Prof. Satoshi Hamaguchi

Center for Atomic and Molecular Technologies, Osaka University

As the sizes of the semiconductor devices are approaching atomic sizes, the device structures have been rapidly transformed from conventional two-dimensional (2D) structures to complex 3D structures, possibly made of unconventional materials. Such changes in device structures are now posing great challenges to processing technologies. For example, plasma etching and deposition technologies allow the formation of device structures far smaller than what EUV lithography can define via Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP). This exemplifies the importance of plasma processing in the manufacturing of leading-edge semiconductor devices. In this presentation, the latest development of etching and deposition technologies with atomic-scale accuracy, i.e., atomic-layer etching (ALE) and atomic-layer deposition (ALD) will be reviewed. The development of such new processes typically relies on a large number of trials and errors in experiments but data-driven approaches to these problems, such as the use of machine learning, may make the process development more efficient. This possibility will be also discussed. Finally, some thought will be given to the decarbonization of semiconductor processing, another urgent issue in the industry.
Satoshi Hamaguchi, Ph.D., has been Professor of Engineering at the Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Osaka, Japan, since 2004. His research interest includes plasma processing for semiconductor processing, plasma medicine, nuclear fusion, and data-driven plasma science.
Prior to joining Osaka University, Dr. Hamaguchi was Associate Professor of Energy Science, Graduate School of Energy Sciences, Kyoto University, Kyoto, Japan, from 1998 to 2004, Research Staff Member of T. J. Watson Research Center, IBM Research Division, IBM Co. at Yorktown Heights, New York, USA, from 1990 to 1998, and Research Fellow at the Institute of Fusion Studies, University of Texas, Austin, Texas, USA, from 1988 to 1990.
Dr. Hamaguchi received his M. Sci and Ph.D. degrees in mathematics from Courant Institute of Mathematical Sciences, Department of Mathematics, New York University, New York, USA, in 1986 and 1988, B. Sc. an M. Sci in physics from the Department of Physics, University of Tokyo, Tokyo, Japan, in 1982 and 1984. He also holds a Ph. D. in physics from the University of Tokyo. He is a Fellow of American Vacuum Society, American Physical Society, and Japan Society of Applied Physics.